Surface mount, 2-element NPN and PNP bipolar junction transistor in an ultra-small plastic package. Features a 40V collector-emitter breakdown voltage, 600mA continuous collector current, and a 250MHz gain bandwidth product. Operates from -55°C to 150°C with 200mW power dissipation.
Frequency250MHz
PackageSOT-363
Current Rating600mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT4413-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Continuous Collector Current
600mA
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
Frequency
250MHz
Gain Bandwidth Product
250MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
40V
Max Collector Current
600mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
DC Rated Voltage
40V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT4413-7-F Datasheet
Download the complete datasheet for Diodes MMDT4413-7-F to view detailed technical specifications.
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