PNP Silicon Bipolar Junction Transistor, featuring a 150V Collector-Emitter Breakdown Voltage and 200mA Continuous Collector Current. This ultra-small, surface-mount transistor operates up to 300MHz and offers a minimum hFE of 60. Packaged in a SOT-363 plastic case, it supports a wide operating temperature range from -55°C to 150°C.
Frequency300MHz
PackageSOT-363
Current Rating-200mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT5401-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
160V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-200mA
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
60
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
150V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
300MHz
DC Rated Voltage
-150V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT5401-7-F Datasheet
Download the complete datasheet for Diodes MMDT5401-7-F to view detailed technical specifications.
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