
Surface mount bipolar junction transistor (BJT) with NPN and PNP polarity, featuring a 150V collector-emitter breakdown voltage and 180V collector-base voltage. Offers a continuous collector current of -200mA and a maximum collector current of 200mA. Operates with a minimum hFE of 60 and a transition frequency of 300MHz. Housed in a compact SOT-363 package, this component supports a wide operating temperature range from -55°C to 150°C.
Diodes MMDT5451-7 technical specifications.
| Package/Case | SOT-363 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Continuous Collector Current | -200mA |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 60 |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Breakdown Voltage | 150V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Cut Tape |
| Polarity | NPN, PNP |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 160V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes MMDT5451-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
