Dual NPN/PNP silicon bipolar junction transistor (BJT) for small signal applications. Features a 160V collector-emitter voltage (VCEO) and 200mA continuous collector current. Operates with a 300MHz transition frequency and a minimum hFE of 60. Housed in an ultra-small, green, plastic SOT-363 surface-mount package. RoHS compliant and lead-free.
Frequency300MHz
PackageSOT-363
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT5451-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Continuous Collector Current
-200mA
Current Rating
200mA
Emitter Base Voltage (VEBO)
-5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
60
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
150V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP, NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
160V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT5451-7-F Datasheet
Download the complete datasheet for Diodes MMDT5451-7-F to view detailed technical specifications.
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