DIODES

MMDT5551-7-F

Datasheet

NPN BJT Transistor, 160V, 200mA, 300MHz, SOT-363

Diodes

MMDT5551-7-F

Name: MMDT5551-7-F Diodes
Brand: Diodes
SKU: MMDT5551-7-F

NPN BJT Transistor, 160V, 200mA, 300MHz, SOT-363

NPN silicon bipolar junction transistor for switching applications. Features a 160V collector-emitter breakdown voltage and 200mA continuous collector current. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 300MHz. Housed in an ultra-small, plastic SOT-363 package for surface mounting. Operates across a temperature range of -55°C to 150°C.

Frequency300MHz

PackageSOT-363

Current Rating200mA

MountingSurface Mount

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Technical Specifications

Diodes MMDT5551-7-F technical specifications.

General

Package/Case	SOT-363
Collector Base Voltage (VCBO)	180V
Collector Emitter Breakdown Voltage	160V
Collector Emitter Saturation Voltage	200mV
Collector Emitter Voltage (VCEO)	160V
Collector-emitter Voltage-Max	200mV
Continuous Collector Current	200mA
Current Rating	200mA
DC Current Gain-Min (hFE)	30
Emitter Base Voltage (VEBO)	6V
Frequency	300MHz
Gain Bandwidth Product	300MHz
Height	1mm
hFE Min	80
JESD-30 Code	R-PDSO-G6
Lead Free	Lead Free
Length	2.2mm
Max Breakdown Voltage	160V
Max Collector Current	200mA
Max Frequency	300MHz
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200mW
Moisture Sensitivity Level	1
Mount	Surface Mount
Number of Elements	2
Package Body Material	Plastic
Package Quantity	3000
Package Shape	Rectangular
Packaging	Tape and Reel
Peak Reflow Temperature (Cel)	260°C
Polarity	NPN
Power Dissipation	200mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Surface Mount	Yes
Terminal Finish	Tin
Terminal Form	Gull Wing
Terminal Position	DUAL
Time @ Peak Reflow Temperature-Max (s)	10s
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Transition Frequency	300MHz
DC Rated Voltage	160V
Weight	0.000212oz
Width	1.35mm