NPN silicon bipolar junction transistor for switching applications. Features a 160V collector-emitter breakdown voltage and 200mA continuous collector current. Offers a minimum DC current gain (hFE) of 80 and a transition frequency of 300MHz. Housed in an ultra-small, plastic SOT-363 package for surface mounting. Operates across a temperature range of -55°C to 150°C.
Frequency300MHz
PackageSOT-363
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Diodes MMDT5551-7-F technical specifications.
General
Package/Case
SOT-363
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Continuous Collector Current
200mA
Current Rating
200mA
DC Current Gain-Min (hFE)
30
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
80
JESD-30 Code
R-PDSO-G6
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
160V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Moisture Sensitivity Level
1
Mount
Surface Mount
Number of Elements
2
Package Body Material
Plastic
Package Quantity
3000
Package Shape
Rectangular
Packaging
Tape and Reel
Peak Reflow Temperature (Cel)
260°C
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Surface Mount
Yes
Terminal Finish
Tin
Terminal Form
Gull Wing
Terminal Position
DUAL
Time @ Peak Reflow Temperature-Max (s)
10s
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency
300MHz
DC Rated Voltage
160V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMDT5551-7-F Datasheet
Download the complete datasheet for Diodes MMDT5551-7-F to view detailed technical specifications.
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