NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 160V collector-emitter breakdown voltage and a 200mA maximum collector current. Offers a 300MHz gain bandwidth product and a minimum hFE of 80. Packaged in an ultra-small SOT-323 plastic surface mount package. Operates across a wide temperature range from -55°C to 150°C.
PackageSOT-323
Current Rating200mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes MMST5551-7 technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 180V |
| Collector Emitter Breakdown Voltage | 160V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 300MHz |
| Height | 1mm |
| hFE Min | 80 |
| Lead Free | Contains Lead |
| Length | 2.2mm |
| Max Breakdown Voltage | 160V |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 160V |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Diodes MMST5551-7 Datasheet
Download the complete datasheet for Diodes MMST5551-7 to view detailed technical specifications.
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