NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 160V collector-emitter breakdown voltage (VCEO) and a 200mA maximum collector current. Operates with a 300MHz transition frequency and offers a minimum hFE of 80. Packaged in an ultra-small SOT-323 plastic surface-mount package, this silicon transistor is RoHS compliant and operates within a temperature range of -55°C to 150°C.
Frequency300MHz
PackageSOT-323
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Diodes MMST5551-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Current Rating
200mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1mm
hFE Min
80
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
160V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
300MHz
DC Rated Voltage
160V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMST5551-7-F Datasheet
Download the complete datasheet for Diodes MMST5551-7-F to view detailed technical specifications.
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