NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector Emitter Breakdown Voltage (VCEO) and a 500mA Continuous Collector Current. This surface mount transistor is housed in an ultra-small SOT-323 plastic package. It offers a high minimum DC current gain (hFE) of 10000 and a maximum power dissipation of 200mW. Operating temperature range is -55°C to 150°C.
PackageSOT-323
Current Rating500mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Diodes MMST6427-7-F technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1.2V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 12V |
| Height | 1mm |
| hFE Min | 10000 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Weight | 0.000212oz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes MMST6427-7-F Datasheet
Download the complete datasheet for Diodes MMST6427-7-F to view detailed technical specifications.
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