NPN bipolar junction transistor (BJT) for small signal applications. Features 80V collector-emitter breakdown voltage (VCEO) and 500mA continuous collector current. Operates with a 100MHz transition frequency and 100 minimum hFE. Housed in an ultra-small, plastic SOT-323 surface-mount package. RoHS compliant and lead-free.
Frequency100MHz
PackageSOT-323
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Diodes MMSTA06-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
4V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
80V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
80V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMSTA06-7-F Datasheet
Download the complete datasheet for Diodes MMSTA06-7-F to view detailed technical specifications.
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