
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Packaged in an ultra-small SOT-323 plastic surface mount package, this component is RoHS and REACH SVHC compliant, operating from -55°C to 150°C.
Diodes MMSTA55-7-F technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -60V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes MMSTA55-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.