PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 60V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Packaged in an ultra-small SOT-323 plastic surface mount package, this component is RoHS and REACH SVHC compliant, operating from -55°C to 150°C.
Frequency50MHz
PackageSOT-323
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Diodes MMSTA55-7-F technical specifications.
General
Package/Case
SOT-323
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-500mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-4V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1mm
hFE Min
100
Lead Free
Lead Free
Length
2.2mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
200mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
200mW
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-60V
Weight
0.000212oz
Width
1.35mm
Compliance
RoHS
Compliant
Datasheet
Diodes MMSTA55-7-F Datasheet
Download the complete datasheet for Diodes MMSTA55-7-F to view detailed technical specifications.
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