
PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -500mA and a collector-emitter breakdown voltage of 80V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 50MHz. Packaged in an ultra-small, 3-lead plastic SOT-323 surface mount package, this component is lead-free and RoHS compliant.
Diodes MMSTA56-7-F technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -4V |
| Gain Bandwidth Product | 50MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -40V |
| Weight | 0.000212oz |
| Width | 1.35mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes MMSTA56-7-F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.