
General purpose rectifier diode featuring 1A average rectified current and 200V repetitive reverse voltage. This silicon component offers a maximum forward surge current of 40A and a reverse recovery time of 25ns. Operating across a wide temperature range from -65°C to 175°C, it has a maximum power dissipation of 900mW. The surface mount device is housed in a POWERDI 123 plastic package, supplied on tape and reel.
Diodes SBR1U200P1-7 technical specifications.
| Average Rectified Current | 1A |
| Forward Current | 1A |
| Height | 3mm |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Forward Surge Current (Ifsm) | 40A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 900mW |
| Max Repetitive Reverse Voltage (Vrrm) | 200V |
| Max Reverse Current | 50uA |
| Max Reverse Voltage (DC) | 200V |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Peak Non-Repetitive Surge Current | 40A |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 25ns |
| RoHS Compliant | Yes |
| Series | SBR® |
| Width | 1.93mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes SBR1U200P1-7 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
