NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V collector-emitter breakdown voltage (VCEO) and a continuous collector current rating of 500mA. Operates with a maximum power dissipation of 1W and a transition frequency of 50MHz. Packaged in a SOT-89 surface-mount case, this lead-free component is RoHS and REACH SVHC compliant.
Frequency50MHz
PackageSOT-89
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Diodes SXTA42TA technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
6V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
1.5mm
Lead Free
Lead Free
Length
4.5mm
Max Breakdown Voltage
300V
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
300V
Weight
0.001834oz
Width
2.5mm
Compliance
RoHS
Compliant
Datasheet
Diodes SXTA42TA Datasheet
Download the complete datasheet for Diodes SXTA42TA to view detailed technical specifications.
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