
N-channel JFET transistor featuring 60V drain-source voltage (Vdss) and 270mA continuous drain current (ID). This silicon FET offers a maximum drain-source on-resistance (Rds On) of 5 Ohms and a threshold voltage of 2.5V. Designed for through-hole mounting, it comes in a TO-92 package with a 1.27mm lead pitch. Maximum power dissipation is 625mW, with operating temperatures ranging from -55°C to 150°C.
Diodes VN10LP technical specifications.
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