N-channel JFET transistor featuring 60V drain-source voltage (Vdss) and 270mA continuous drain current (ID). This silicon FET offers a maximum drain-source on-resistance (Rds On) of 5 Ohms and a threshold voltage of 2.5V. Designed for through-hole mounting, it comes in a TO-92 package with a 1.27mm lead pitch. Maximum power dissipation is 625mW, with operating temperatures ranging from -55°C to 150°C.
PackageTO-92-3
Current Rating270mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Diodes VN10LP technical specifications.
General
Package/Case
TO-92-3
Continuous Drain Current (ID)
270mA
Current Rating
270mA
Drain to Source Resistance
7.5R
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
5R
Gate to Source Voltage (Vgs)
20V
Height
4.01mm
Input Capacitance
60pF
Lead Free
Lead Free
Lead Pitch
1.27mm
Length
4.77mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
625mW
Radiation Hardening
No
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
2.5V
DC Rated Voltage
60V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes VN10LP Datasheet
Download the complete datasheet for Diodes VN10LP to view detailed technical specifications.
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