NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 75V Collector-Emitter Breakdown Voltage (VCEO) and a 5A Continuous Collector Current. Operates with a 140MHz Gain Bandwidth Product and a 2.75W Max Power Dissipation. Packaged in SMD/SMT for surface mounting, this lead-free and RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
Frequency140MHz
PackageSMD/SMT
Current Rating5A
MountingSurface Mount
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Technical Specifications
Diodes ZDT1053TA technical specifications.
General
Package/Case
SMD/SMT
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
75V
Collector Emitter Saturation Voltage
440mV
Collector Emitter Voltage (VCEO)
75V
Collector-emitter Voltage-Max
440mV
Continuous Collector Current
5A
Current Rating
5A
Emitter Base Voltage (VEBO)
5V
Frequency
140MHz
Gain Bandwidth Product
140MHz
Height
1.6mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
75V
Max Collector Current
5A
Max Frequency
140MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.75W
Mount
Surface Mount
Number of Elements
2
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
2.75W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
140MHz
DC Rated Voltage
75V
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZDT1053TA Datasheet
Download the complete datasheet for Diodes ZDT1053TA to view detailed technical specifications.
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