Dual NPN bipolar junction transistor (BJT) for surface mount applications, featuring a DC rated voltage of -25V and a continuous collector current of -5A. This device offers a collector-emitter breakdown voltage of 12V and a transition frequency of 115MHz. Packaged in a TO-261-4 case, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.75W.
PackageTO-261-4
Current Rating-5A
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Diodes ZDT1147TA technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | -15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector-emitter Voltage-Max | 380mV |
| Continuous Collector Current | -5A |
| Current Rating | -5A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 115MHz |
| Height | 1.6mm |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 12V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.75W |
| Mount | Surface Mount |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Transition Frequency | 115MHz |
| DC Rated Voltage | -25V |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZDT1147TA Datasheet
Download the complete datasheet for Diodes ZDT1147TA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.