The ZDT649TA is a NPN bipolar junction transistor with a collector-emitter voltage maximum of 25V and a continuous collector current of 2A. It has a gain bandwidth product of 240MHz and a maximum operating temperature of 150°C. The transistor is packaged in an 8-pin small outline package, R-PDSO-G8, and is RoHS compliant. It is available in quantities of 1000, packaged in tape and reel.
Diodes ZDT649TA technical specifications.
| Collector Base Voltage (VCBO) | 35V |
| Collector-emitter Voltage-Max | 25V |
| Continuous Collector Current | 2A |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 240MHz |
| Height | 1.6mm |
| Lead Free | Contains Lead |
| Length | 6.7mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.75W |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| DC Rated Voltage | 25V |
| Width | 3.7mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZDT649TA to view detailed technical specifications.
No datasheet is available for this part.