
The ZDT749TC is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 25V and a maximum collector current of 2A. It has a maximum power dissipation of 2.75W and is suitable for surface mount applications. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. It features a gain bandwidth product of 160MHz and a transition frequency of 160MHz.
Diodes ZDT749TC technical specifications.
| Package/Case | SMD/SMT |
| Collector Base Voltage (VCBO) | -35V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -230mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 160MHz |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.75W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZDT749TC to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.