Surface mount bipolar junction transistor (BJT) featuring NPN and PNP polarity, with a continuous collector current of 2.5A and a collector-emitter breakdown voltage of 20V. This 4-element silicon transistor offers a maximum power dissipation of 2W and a transition frequency of 140MHz. Packaged in a SOT-223-8 (SM-8) case, it operates within a temperature range of -55°C to 150°C and is supplied on tape and reel.
Frequency140MHz
PackageSOT-223-8
Current Rating2.5A
MountingSurface Mount
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Technical Specifications
Diodes ZHB6718TA technical specifications.
General
Package/Case
SOT-223-8
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
130mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
200mV
Continuous Collector Current
2.5A
Current Rating
2.5A
Emitter Base Voltage (VEBO)
5V
Frequency
140MHz
Gain Bandwidth Product
140MHz
Height
1.6mm
Lead Free
Lead Free
Length
6.7mm
Max Breakdown Voltage
20V
Max Collector Current
2.5A
Max Frequency
140MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
4
Package Quantity
1000
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
140MHz
Width
3.7mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZHB6718TA Datasheet
Download the complete datasheet for Diodes ZHB6718TA to view detailed technical specifications.
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