NPN Bipolar Junction Transistor (BJT) for small signal applications, featuring a continuous collector current of 4A and a collector-emitter voltage (VCEO) of 25V. This through-hole component offers a minimum DC current gain (hFE) of 300 and a transition frequency of 180MHz. It operates within a temperature range of -55°C to 200°C and has a maximum power dissipation of 1W. Packaged in TO-226-3, it is RoHS and REACH SVHC compliant.
Frequency180MHz
PackageTO-226-3
Current Rating4A
MountingThrough Hole
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Technical Specifications
Diodes ZTX1049ASTZ technical specifications.
General
Package/Case
TO-226-3
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
220mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
220mV
Continuous Collector Current
4A
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
4.01mm
hFE Min
300
Lead Free
Lead Free
Length
4.77mm
Max Breakdown Voltage
25V
Max Collector Current
4A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
180MHz
DC Rated Voltage
25V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX1049ASTZ Datasheet
Download the complete datasheet for Diodes ZTX1049ASTZ to view detailed technical specifications.
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