NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-92 package. Features a maximum collector current of 4A and a collector-emitter breakdown voltage of 40V. Offers a transition frequency of 155MHz and a maximum power dissipation of 1W. Operates across a temperature range of -55°C to 150°C, with a collector-emitter saturation voltage of 210mV. This RoHS compliant component is supplied on tape and reel.
PackageTO-92
Current Rating4A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX1051ASTZ technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 210mV |
| Continuous Collector Current | 4A |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 155MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 155MHz |
| DC Rated Voltage | 40V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX1051ASTZ Datasheet
Download the complete datasheet for Diodes ZTX1051ASTZ to view detailed technical specifications.
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