NPN bipolar junction transistor (BJT) designed for high current applications. Features a continuous collector current rating of 3A, a collector-emitter breakdown voltage of 120V, and a collector-base voltage of 175V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. This through-hole component is housed in a TO-226-3 package and offers a transition frequency of 130MHz. RoHS compliant and lead-free.
PackageTO-226-3
Current Rating3A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX1055ASTOA technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 175V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector-emitter Voltage-Max | 310mV |
| Continuous Collector Current | 3A |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 130MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 130MHz |
| DC Rated Voltage | 120V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX1055ASTOA Datasheet
Download the complete datasheet for Diodes ZTX1055ASTOA to view detailed technical specifications.
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