PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -4A and a collector-emitter breakdown voltage of 12V. Operates with a transition frequency of 115MHz and a maximum power dissipation of 1W. Packaged in a TO-92 E-LINE package, suitable for through-hole mounting. Compliant with RoHS and REACH SVHC standards.
Frequency115MHz
PackageTO-92
Current Rating-4A
MountingThrough Hole
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Technical Specifications
Diodes ZTX1147A technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 12V |
| Collector Emitter Saturation Voltage | -175mV |
| Collector Emitter Voltage (VCEO) | 12V |
| Collector-emitter Voltage-Max | 235mV |
| Continuous Collector Current | -4A |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 115MHz |
| Gain Bandwidth Product | 115MHz |
| Height | 4.01mm |
| Length | 4.77mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 115MHz |
| DC Rated Voltage | -12V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX1147A Datasheet
Download the complete datasheet for Diodes ZTX1147A to view detailed technical specifications.
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