PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 25V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -3A. Offers a -200mV Collector-Emitter Saturation Voltage and a -5V Emitter-Base Voltage (VEBO). Operates within a temperature range of -55°C to 200°C with a 135MHz Gain Bandwidth Product. Packaged in a TO-92 E-LINE package for through-hole mounting.
PackageTO-92
Current Rating-3A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX1149A technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | -200mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -3A |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 135MHz |
| Height | 4.01mm |
| Length | 4.77mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 3A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 135MHz |
| DC Rated Voltage | -25V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX1149A Datasheet
Download the complete datasheet for Diodes ZTX1149A to view detailed technical specifications.
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