NPN bipolar junction transistor featuring a 60V collector-emitter breakdown voltage and 1A continuous collector current. This silicon transistor offers a 150MHz transition frequency and a 350mV collector-emitter saturation voltage. Housed in a TO-92 package, it supports through-hole mounting and operates within a temperature range of -55°C to 200°C. Maximum power dissipation is 1W.
Frequency150MHz
PackageTO-92
Current Rating1A
MountingThrough Hole
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Technical Specifications
Diodes ZTX451 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
350mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
350mV
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Frequency
150MHz
Gain Bandwidth Product
150MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
1A
Max Frequency
150MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
60V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX451 Datasheet
Download the complete datasheet for Diodes ZTX451 to view detailed technical specifications.
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