NPN bipolar junction transistor (BJT) featuring a 1A continuous collector current and 60V collector-emitter breakdown voltage. This silicon transistor offers a 150MHz transition frequency and a maximum power dissipation of 1W. Designed for through-hole mounting, it is housed in a TO-92 compatible E-Line package. Operating across a wide temperature range from -55°C to 150°C, this component is RoHS and REACH SVHC compliant.
PackageTO-92
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX451STOA technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector-emitter Voltage-Max | 350mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 60V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX451STOA Datasheet
Download the complete datasheet for Diodes ZTX451STOA to view detailed technical specifications.
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