
NPN bipolar junction transistor (BJT) in a TO-92 compatible package. Features a 300V collector-emitter breakdown voltage (V(BR)CEO) and a 500mA continuous collector current (I(C)). Offers a maximum power dissipation of 1W and a transition frequency of 75MHz. Operates across a wide temperature range from -55°C to 200°C. This through-hole mounted component is lead-free and RoHS compliant.
Diodes ZTX457 technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 75MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 500mA |
| Max Frequency | 20MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 75MHz |
| DC Rated Voltage | 300V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX457 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
