PNP Silicon Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 100V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -1A. Offers a -300mV Collector-Emitter Saturation Voltage and a 150MHz Gain Bandwidth Product. Operates across a temperature range of -55°C to 200°C with a maximum power dissipation of 1W. Through-hole mounting and RoHS compliant.
PackageTO-92
Current Rating-1A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX553 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
150MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
1A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-100V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX553 Datasheet
Download the complete datasheet for Diodes ZTX553 to view detailed technical specifications.
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