PNP Silicon Bipolar Junction Transistor (BJT) in a TO-92 package. Features a 100V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -1A. Offers a -300mV Collector-Emitter Saturation Voltage and a 150MHz Gain Bandwidth Product. Operates across a temperature range of -55°C to 200°C with a maximum power dissipation of 1W. Through-hole mounting and RoHS compliant.
PackageTO-92
Current Rating-1A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX553 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 150MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | -100V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX553 Datasheet
Download the complete datasheet for Diodes ZTX553 to view detailed technical specifications.
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