PNP Silicon Bipolar Junction Transistor for small signal applications. Features a continuous collector current of -1A, a collector-emitter breakdown voltage of 150V, and a gain bandwidth product of 100MHz. Housed in a TO-92 compatible E-LINE package, this through-hole component offers a maximum power dissipation of 1W and operates across a wide temperature range from -55°C to 150°C. RoHS compliant.
PackageTO-92
Current Rating-1A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX555 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -160V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 4.01mm |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -150V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX555 Datasheet
Download the complete datasheet for Diodes ZTX555 to view detailed technical specifications.
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