PNP Silicon Bipolar Junction Transistor for small signal applications. Features a continuous collector current of -1A, a collector-emitter breakdown voltage of 150V, and a gain bandwidth product of 100MHz. Housed in a TO-92 compatible E-LINE package, this through-hole component offers a maximum power dissipation of 1W and operates across a wide temperature range from -55°C to 150°C. RoHS compliant.
PackageTO-92
Current Rating-1A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX555 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-160V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
-300mV
Collector-emitter Voltage-Max
300mV
Continuous Collector Current
-1A
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
100MHz
Height
4.01mm
Length
4.77mm
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-150V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX555 Datasheet
Download the complete datasheet for Diodes ZTX555 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.