PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 400V Collector Emitter Breakdown Voltage (VCEO) and a 400V Collector Base Voltage (VCBO). Offers a continuous collector current of -200mA and a transition frequency of 50MHz. Packaged in a TO-92 compatible E-LINE package with 3 leads, suitable for through-hole mounting. Operates within a temperature range of -55°C to 200°C with a maximum power dissipation of 1W.
Frequency50MHz
PackageTO-92
Current Rating-200mA
MountingThrough Hole
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Technical Specifications
Diodes ZTX558 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
400V
Collector Emitter Breakdown Voltage
400V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
400V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-200mA
Current Rating
-200mA
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
200mA
Max Frequency
50MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-400V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX558 Datasheet
Download the complete datasheet for Diodes ZTX558 to view detailed technical specifications.
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