PNP Silicon Bipolar Junction Transistor (BJT) in a TO-92 compatible E-LINE package. Features a 400V collector-emitter breakdown voltage, 200mA continuous collector current, and a 50MHz transition frequency. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W. This through-hole component is lead-free, RoHS compliant, and REACH SVHC compliant.
PackageTO-92
Current Rating-200mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX558STZ technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -400V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -200mA |
| Current Rating | -200mA |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 50MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 200mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -400V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX558STZ Datasheet
Download the complete datasheet for Diodes ZTX558STZ to view detailed technical specifications.
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