PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 500V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a 500V Collector Base Voltage (VCBO). Offers a continuous collector current of -150mA and a maximum power dissipation of 1W. Operates within a temperature range of -55°C to 150°C, with a transition frequency of 60MHz. Packaged in an E-LINE, 3-pin through-hole configuration. RoHS and REACH SVHC compliant.
Current Rating-150mA
MountingThrough Hole
PolarityPNP
Quick Jump:
Technical Specifications
Diodes ZTX560 technical specifications.
General
Collector Base Voltage (VCBO)
-500V
Collector Emitter Breakdown Voltage
500V
Collector Emitter Saturation Voltage
-500mV
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-150mA
Current Rating
-150mA
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
60MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
150mA
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
60MHz
DC Rated Voltage
-500V
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX560 Datasheet
Download the complete datasheet for Diodes ZTX560 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.