NPN Bipolar Junction Transistor (BJT) featuring a Darlington configuration. This through-hole component offers a 120V collector-emitter breakdown voltage and a 1A continuous collector current. Maximum power dissipation is 1W, with a transition frequency of 150MHz. The device operates within a temperature range of -55°C to 200°C and is housed in a 3-pin E-Line TO-92 package.
PackageTO-92
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX605 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
120V
Collector-emitter Voltage-Max
1.5V
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
10V
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
1A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
120V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX605 Datasheet
Download the complete datasheet for Diodes ZTX605 to view detailed technical specifications.
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