NPN bipolar junction transistor (BJT) for small signal applications. Features a 100V collector-emitter breakdown voltage (VCEO) and 800mA continuous collector current (IC). Housed in a TO-92 compatible package with 3 pins, this silicon transistor offers a maximum power dissipation of 1W and operates across a wide temperature range from -55°C to 200°C. It is RoHS compliant and designed for through-hole mounting.
PackageTO-92
Current Rating800mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX614 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1.25V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.25V
Continuous Collector Current
800mA
Current Rating
800mA
Emitter Base Voltage (VEBO)
10V
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
800mA
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
DC Rated Voltage
100V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX614 Datasheet
Download the complete datasheet for Diodes ZTX614 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.