NPN bipolar junction transistor (BJT) for small signal applications. Features a 100V collector-emitter breakdown voltage (VCEO) and 800mA continuous collector current (IC). Housed in a TO-92 compatible package with 3 pins, this silicon transistor offers a maximum power dissipation of 1W and operates across a wide temperature range from -55°C to 200°C. It is RoHS compliant and designed for through-hole mounting.
PackageTO-92
Current Rating800mA
MountingThrough Hole
PolarityNPN
Quick Jump:
Technical Specifications
Diodes ZTX614 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.25V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.25V |
| Continuous Collector Current | 800mA |
| Current Rating | 800mA |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 800mA |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 100V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX614 Datasheet
Download the complete datasheet for Diodes ZTX614 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.