NPN Silicon Bipolar Junction Transistor (BJT) in a TO-92 E-LINE package. Features a 2A continuous collector current, 25V collector-emitter breakdown voltage (VCEO), and 35V collector-base voltage (VCBO). Offers a 230mV collector-emitter saturation voltage and a 240MHz transition frequency. Operates within a -55°C to 200°C temperature range with 1W maximum power dissipation. Through-hole mount, RoHS compliant.
PackageTO-92
Current Rating2A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX649 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
35V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
230mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
2A
Current Rating
2A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
240MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
2A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
240MHz
DC Rated Voltage
25V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX649 Datasheet
Download the complete datasheet for Diodes ZTX649 to view detailed technical specifications.
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