NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a 1A Continuous Collector Current (I(C)). Operates with a 5V Emitter-Base Voltage (VEBO) and offers a 30MHz Gain Bandwidth Product. Housed in a TO-92 package, this through-hole component supports a maximum power dissipation of 1W and operates across a temperature range of -55°C to 150°C.
PackageTO-92
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX655 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
500mV
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
1A
Current Rating
1A
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
30MHz
Height
4.01mm
Lead Free
Contains Lead
Length
4.77mm
Max Collector Current
1A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
RoHS Compliant
Yes
Transition Frequency
30MHz
DC Rated Voltage
150V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX655 Datasheet
Download the complete datasheet for Diodes ZTX655 to view detailed technical specifications.
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