NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 150V Collector-Emitter Breakdown Voltage (V(BR)CEO) and a 1A Continuous Collector Current (I(C)). Operates with a 5V Emitter-Base Voltage (VEBO) and offers a 30MHz Gain Bandwidth Product. Housed in a TO-92 package, this through-hole component supports a maximum power dissipation of 1W and operates across a temperature range of -55°C to 150°C.
PackageTO-92
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX655 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 30MHz |
| Height | 4.01mm |
| Lead Free | Contains Lead |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 150V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX655 Datasheet
Download the complete datasheet for Diodes ZTX655 to view detailed technical specifications.
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