NPN Bipolar Junction Transistor (BJT) in a TO-226-3 (Super E-Line) package. Features a 150V collector-emitter breakdown voltage and 1A continuous collector current. Offers a maximum collector-emitter saturation voltage of 500mV and a gain bandwidth product of 30MHz. Operates across a temperature range of -55°C to 150°C with 1W maximum power dissipation. This through-hole mount component is lead-free, RoHS compliant, and supplied on tape and reel.
PackageTO-226-3
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX655STZ technical specifications.
General
| Package/Case | TO-226-3 |
| Collector Base Voltage (VCBO) | 150V |
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 30MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 150V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX655STZ Datasheet
Download the complete datasheet for Diodes ZTX655STZ to view detailed technical specifications.
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