NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V Collector-Emitter Breakdown Voltage (V(BR)CEO) and 300V Collector Base Voltage (VCBO). Offers a continuous collector current of 500mA and a transition frequency of 30MHz. Housed in a TO-92 compatible E-LINE package with 3 leads, suitable for through-hole mounting. Operates from -55°C to 150°C with a maximum power dissipation of 1W.
PackageTO-92
Current Rating500mA
MountingThrough Hole
PolarityNPN
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Technical Specifications
Diodes ZTX657STZ technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 30MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 300V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX657STZ Datasheet
Download the complete datasheet for Diodes ZTX657STZ to view detailed technical specifications.
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