
NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 70V Collector Emitter Breakdown Voltage (VCEO) and 70V Collector Base Voltage (VCBO). Offers a continuous collector current of 1A and a maximum power dissipation of 1W. Operates across a temperature range of -55°C to 150°C with a transition frequency of 150MHz. Packaged in a TO-92 compatible E-LINE package, suitable for through-hole mounting.
Diodes ZTX692BSTOA technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 70V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | 1A |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 150MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | No |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 70V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Not Compliant |
Download the complete datasheet for Diodes ZTX692BSTOA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
