NPN bipolar junction transistor featuring a 120V collector-emitter breakdown voltage and 500mA continuous collector current. This silicon transistor offers a 130MHz transition frequency and a maximum power dissipation of 1W. Designed for through-hole mounting, it utilizes a TO-92 compatible E-LINE package with three leads. Operating temperature range spans from -55°C to 200°C, with a lead-free and RoHS compliant construction.
Frequency130MHz
PackageTO-92
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Diodes ZTX694B technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
120V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
500mA
Max Frequency
130MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
120V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX694B Datasheet
Download the complete datasheet for Diodes ZTX694B to view detailed technical specifications.
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