NPN bipolar junction transistor (BJT) for small signal applications. Features a 180V collector-emitter breakdown voltage (V(BR)CEO) and 180V collector base voltage (VCBO). Offers a continuous collector current of 500mA and a maximum power dissipation of 1W. Operates within a temperature range of -55°C to 200°C, with a transition frequency of 70MHz. Packaged in a TO-92 compatible E-Line package for through-hole mounting.
Frequency50MHz
PackageTO-92
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Diodes ZTX696B technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
180V
Collector Emitter Saturation Voltage
250mV
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
Gain Bandwidth Product
70MHz
Height
4.01mm
Lead Free
Contains Lead
Length
4.77mm
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
4000
Packaging
Bulk
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
70MHz
DC Rated Voltage
180V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX696B Datasheet
Download the complete datasheet for Diodes ZTX696B to view detailed technical specifications.
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