PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -2.5A and a collector-emitter breakdown voltage of 20V. Offers a transition frequency of 180MHz and a maximum power dissipation of 1W. Packaged in a TO-92 (E-LINE) through-hole mount configuration. Operates across a temperature range of -55°C to 200°C. RoHS and REACH SVHC compliant.
Frequency180MHz
PackageTO-92
Current Rating-2.5A
MountingThrough Hole
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Technical Specifications
Diodes ZTX718 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
20V
Collector Emitter Saturation Voltage
-190mV
Collector Emitter Voltage (VCEO)
20V
Collector-emitter Voltage-Max
260mV
Continuous Collector Current
-2.5A
Current Rating
-2.5A
Emitter Base Voltage (VEBO)
-5V
Frequency
180MHz
Gain Bandwidth Product
180MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
2.5A
Max Frequency
180MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
180MHz
DC Rated Voltage
-20V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX718 Datasheet
Download the complete datasheet for Diodes ZTX718 to view detailed technical specifications.
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