PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -2A and a collector-emitter breakdown voltage of 25V. Offers a transition frequency of 160MHz and a maximum power dissipation of 1W. Packaged in a TO-92 E-LINE package for through-hole mounting. Operates across a wide temperature range from -55°C to 200°C.
Frequency160MHz
PackageTO-92
Current Rating-2A
MountingThrough Hole
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Technical Specifications
Diodes ZTX749 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
35V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
-230mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-2A
Current Rating
-2A
Emitter Base Voltage (VEBO)
-5V
Frequency
160MHz
Gain Bandwidth Product
160MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
2A
Max Frequency
100MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
160MHz
DC Rated Voltage
-25V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX749 Datasheet
Download the complete datasheet for Diodes ZTX749 to view detailed technical specifications.
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