PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -2A and a collector-emitter breakdown voltage of 25V. Offers a maximum power dissipation of 1W and a gain bandwidth product of 160MHz. Packaged in a TO-92 compatible E-Line package, suitable for through-hole mounting. This component is lead-free, RoHS compliant, and REACH SVHC compliant.
PackageTO-92
Current Rating-2A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX749STOA technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -35V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Continuous Collector Current | -2A |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 160MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 160MHz |
| DC Rated Voltage | -25V |
| Weight | 0.016oz |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX749STOA Datasheet
Download the complete datasheet for Diodes ZTX749STOA to view detailed technical specifications.
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