PNP Bipolar Junction Transistor (BJT) for small signal applications. Features a 100V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current rating of -2A. Operates with a 140MHz transition frequency and a maximum power dissipation of 1W. Packaged in a TO-92 compatible E-LINE package with 3 leads, suitable for through-hole mounting. Compliant with RoHS and REACH SVHC standards, operating from -55°C to 200°C.
Frequency140MHz
PackageTO-92
Current Rating-2A
MountingThrough Hole
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Technical Specifications
Diodes ZTX753STZ technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-300mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-2A
Current Rating
-2A
Emitter Base Voltage (VEBO)
5V
Frequency
140MHz
Gain Bandwidth Product
140MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Breakdown Voltage
100V
Max Collector Current
2A
Max Frequency
140MHz
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
2000
Packaging
Box
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
140MHz
DC Rated Voltage
-100V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX753STZ Datasheet
Download the complete datasheet for Diodes ZTX753STZ to view detailed technical specifications.
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