PNP Silicon Bipolar Junction Transistor in a TO-92 package. Features a 300V Collector-Emitter Breakdown Voltage (VCEO) and a continuous collector current of -500mA. Offers a maximum power dissipation of 1W and a transition frequency of 30MHz. This through-hole mount component operates within a temperature range of -55°C to 200°C and is RoHS compliant.
PackageTO-92
Current Rating-500mA
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX757 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
500mV
Continuous Collector Current
-500mA
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
30MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
500mA
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
30MHz
DC Rated Voltage
-300V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX757 Datasheet
Download the complete datasheet for Diodes ZTX757 to view detailed technical specifications.
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