PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -3A, collector-emitter breakdown voltage of 15V, and a transition frequency of 150MHz. Housed in a TO-92 E-LINE package, this through-hole mounted component operates from -55°C to 150°C with a maximum power dissipation of 1W. It is lead-free, RoHS compliant, and REACH SVHC compliant.
PackageTO-92
Current Rating-3A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX788A technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
-20V
Collector Emitter Breakdown Voltage
15V
Collector Emitter Saturation Voltage
-500mV
Collector-emitter Voltage-Max
330mV
Continuous Collector Current
-3A
Current Rating
-3A
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
150MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
3A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Radiation Hardening
No
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Transition Frequency
150MHz
DC Rated Voltage
-15V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX788A Datasheet
Download the complete datasheet for Diodes ZTX788A to view detailed technical specifications.
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