PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a continuous collector current of -3A and a collector-emitter voltage (VCEO) of -15V. Offers a gain-bandwidth product of 100MHz and a maximum power dissipation of 1W. Packaged in a TO-92 compatible E-LINE package with through-hole mounting. Operates across a wide temperature range from -55°C to 150°C.
Diodes ZTX788B technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -15V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector-emitter Voltage-Max | -15V |
| Continuous Collector Current | -3A |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 4.01mm |
| Lead Free | Contains Lead |
| Length | 4.77mm |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 4000 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | ZTX788 |
| DC Rated Voltage | -15V |
| Weight | 0.016oz |
| Width | 2.41mm |
| RoHS | Compliant |
Download the complete datasheet for Diodes ZTX788B to view detailed technical specifications.
No datasheet is available for this part.
