PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 15V. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1W. This through-hole component is housed in a TO-92 compatible E-LINE package, suitable for tape and reel packaging. It boasts a gain bandwidth product and transition frequency of 100MHz, with a collector-emitter saturation voltage of 450mV.
PackageTO-92
Current Rating-3A
MountingThrough Hole
PolarityPNP
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Technical Specifications
Diodes ZTX788BSTZ technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector-emitter Voltage-Max | 450mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 4.01mm |
| Lead Free | Lead Free |
| Length | 4.77mm |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -15V |
| Width | 2.41mm |
Compliance
| RoHS | Compliant |
Datasheet
Diodes ZTX788BSTZ Datasheet
Download the complete datasheet for Diodes ZTX788BSTZ to view detailed technical specifications.
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