PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 40V Collector-Emitter Breakdown Voltage (VCEO) and a 2A Continuous Collector Current. Operates with a 100MHz Gain Bandwidth Product and a 40V DC Rated Voltage. Packaged in a TO-92 compatible E-LINE package, this through-hole component offers 1W power dissipation and a wide operating temperature range from -55°C to 200°C. RoHS compliant and lead-free.
Frequency100MHz
PackageTO-92
Voltage Rating400V
Current Rating-2A
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Technical Specifications
Diodes ZTX790A technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Contact Current Rating
10A
Continuous Collector Current
-2A
Current Rating
-2A
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
4.01mm
Lead Free
Lead Free
Length
4.77mm
Max Collector Current
2A
Max Operating Temperature
200°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
4000
Packaging
Bulk
Polarity
PNP
Power Dissipation
1W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Voltage Rating
400V
DC Rated Voltage
-40V
Weight
0.016oz
Width
2.41mm
Compliance
RoHS
Compliant
Datasheet
Diodes ZTX790A Datasheet
Download the complete datasheet for Diodes ZTX790A to view detailed technical specifications.
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